Semiconductor Device, Manufacturing Method Thereof, and Power Generating Device

ABSTRACT

The present disclosure provides a semiconductor device, a manufacturing method thereof, and a power generating device. The semiconductor device includes a substrate and a thin film battery on the substrate. The thin film battery includes at least one anode structure and at least one cathode structure on the substrate, and a solid electrolyte layer spacing the at least one anode structure apart from the at least one cathode structure. Each anode structure includes an anode current collector on a surface of the substrate and an anode layer on the surface of the substrate and connected to a side surface of the anode current collector. Each cathode structure includes a cathode current collector on the surface of the substrate and a cathode layer on the surface of the substrate and connected to a side surface of the cathode current collector.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is the United States national phase of InternationalApplication No. PCT/CN2019/126264 filed Dec. 18, 2019, and claimspriority to Chinese Patent Application No. 201910001406.4, filed Jan. 2,2019, the disclosures of which are hereby incorporated by reference intheir entirety.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device, amanufacturing method thereof, and a power generating device.

BACKGROUND

In recent years, micro-systems such as portable electronic devices (forexample, wearable devices) and implantable electronic medical deviceshave gradually become research hotspots. These systems generallycomprise thin film transistors (which may be used as switches) and thinfilm batteries.

SUMMARY

According to an aspect of the embodiments of the present disclosure, asemiconductor device is provided. The semiconductor device comprises: asubstrate; a thin film battery on the substrate, comprising: at leastone anode structure on the substrate, each of which comprises an anodecurrent collector on a surface of the substrate, and an anode layer onthe surface of the substrate and connected to a side surface of theanode current collector; at least one cathode structure on thesubstrate, each of which comprises a cathode current collector on thesurface of the substrate, and a cathode layer on the surface of thesubstrate and connected to a side surface of the cathode currentcollector; and a solid electrolyte layer spacing the at least one anodestructure apart from the at least one cathode structure.

In some embodiments, the semiconductor device further comprises at leastone thin film transistor on the substrate, each of which comprises: afirst electrode on the substrate, a second electrode on the substrate,an active layer on the substrate, wherein the active layer is betweenthe first electrode and the second electrode and connected to the firstelectrode and the second electrode; a dielectric layer on a side of theactive layer facing away from the substrate; and a gate on a side of thedielectric layer facing away from the active layer.

In some embodiments, materials of the first electrode and the secondelectrode are the same as a material of the anode current collector; orthe materials of the first electrode and the second electrode are thesame as a material of the cathode current collector.

In some embodiments, a material of the dielectric layer is the same as amaterial of the solid electrolyte layer.

In some embodiments, a material of the gate is the same as a material ofthe cathode current collector or a material of the anode currentcollector.

According to another aspect of the present disclosure, a powergenerating device is provided. The power generating device comprises:the semiconductor device as described above; and a nano-generatorelectrically connected to the semiconductor device.

In some embodiments, the nano-generator comprises a first electrodelayer, a second electrode layer, and a first material layer and a secondmaterial layer between the first electrode layer and the secondelectrode layer, wherein the first material layer is in contact with thefirst electrode layer, and the second material layer is in contact withthe second electrode layer; and the at least one thin film transistorcomprises: a first thin film transistor, of which a first electrode iselectrically connected to the anode current collector of the thin filmbattery, a second electrode and a gate each is electrically connected tothe first electrode layer of the nano-generator, and a second thin filmtransistor, of which a first electrode is electrically connected to thecathode current collector of the thin film battery, and a secondelectrode and a gate each is electrically connected to the secondelectrode layer of the nano-generator.

In some embodiments, wherein the first thin film transistor is an NMOStransistor, and the second thin film transistor is a PMOS transistor.

According to another aspect of the present disclosure, a manufacturingmethod for a semiconductor device is provided. The manufacturing methodcomprises: forming at least one anode structure and at least one cathodestructure on a substrate, wherein each of the at least one anodestructure comprises an anode current collector on a surface of thesubstrate and an anode layer on the surface of the substrate andconnected to a side surface of the anode current collector, and each ofthe at least one cathode structure comprises a cathode current collectoron the surface of the substrate and a cathode layer on the surface ofthe substrate and connected to a side surface of the cathode currentcollector; and forming a solid electrolyte layer on the substrate, theat least one anode structure and the at least one cathode structure,wherein the solid electrolyte layer spaces the at least one anodestructure apart from the at least one cathode structure.

In some embodiments, the forming of the at least one anode structure andthe at least one cathode structure on the substrate comprises: formingat least one anode current collector and at least one cathode currentcollector spaced apart from the at least one anode current collector onthe substrate; filling an anode material between the at least one anodecurrent collector and the at least one cathode current collector;patterning the anode material to form the anode layer, wherein the anodelayer is spaced apart from the at least one cathode current collector;filling a cathode material between the anode layer and the at least onecathode current collector; and patterning the cathode material to formthe cathode layer, wherein the cathode layer is spaced apart from theanode layer.

In some embodiments, the forming of the at least one anode structure andthe at least one cathode structure on the substrate comprises: formingat least one anode current collector and at least one cathode currentcollector spaced apart from the at least one anode current collector onthe substrate; filling a cathode material between the at least one anodecurrent collector and the at least one cathode current collector;patterning the cathode material to form the cathode layer, wherein thecathode layer is spaced apart from the at least one anode currentcollector; filling an anode material between the cathode layer and theat least one anode current collector; and patterning the anode materialto form the anode layer, wherein the anode layer is spaced apart fromthe cathode layer.

In some embodiments, the forming of the at least one anode structure andthe at least one cathode structure on the substrate comprises: formingat least one anode current collector and at least one cathode currentcollector spaced apart from the at least one anode current collector onthe substrate; forming the anode layer and the cathode layer by athree-dimensional printing process respectively; and connecting theanode layer to a side surface of the at least one anode currentcollector, and connecting the cathode layer to a side surface of the atleast one cathode current collector, wherein the cathode layer is spacedapart from the anode layer.

In some embodiments, the manufacturing method further comprises: forminga first electrode and a second electrode spaced apart from the firstelectrode the substrate during the forming of the at least one anodecurrent collector and the at least one cathode current collector;forming an active layer between the first electrode and the secondelectrode on the substrate, wherein the active layer is connected to thefirst electrode and the second electrode; forming a dielectric layer onthe active layer during the forming of the solid electrolyte layer; andforming a gate on the dielectric layer after forming the solidelectrolyte layer.

In some embodiments, materials of the first electrode and the secondelectrode are the same as a material of the anode current collector, orthe materials of the first electrode and the second electrode are thesame as a material of the cathode current collector.

In some embodiments, a material of the dielectric layer is the same as amaterial of the solid electrolyte layer.

In some embodiments, a material of the gate is the same as a material ofthe cathode current collector, or the material of the gate is the sameas a material of the anode current collector.

Other features and advantages of the present disclosure will becomeapparent from the following detailed description of exemplaryembodiments of the present disclosure with reference to the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which constitute part of this specification,illustrate exemplary embodiments of the present disclosure and, togetherwith this specification, serve to explain the principles of the presentdisclosure.

The present disclosure may be more clearly understood from the followingdetailed description with reference to the accompanying drawings, inwhich:

FIG. 1 is a schematic cross-sectional view showing a semiconductordevice according to an embodiment of the present disclosure;

FIG. 2 is a schematic cross-sectional view showing a semiconductordevice according to another embodiment of the present disclosure;

FIG. 3A is a schematic view showing that a thin film transistoraccording to an embodiment of the present disclosure generates anelectric-double-layer capacitance under the action of a positive bias;

FIG. 3B is a schematic view showing that the thin film transistoraccording to an embodiment of the present disclosure generates anelectric-double-layer capacitance under the action of a negative bias;

FIG. 4 is a flowchart showing a manufacturing method for a semiconductordevice according to an embodiment of the present disclosure;

FIGS. 5 to 12 are schematic cross-sectional views showing structures atseveral stages during a manufacturing process for a semiconductor deviceaccording to some embodiments of the present disclosure;

FIG. 13 is a schematic view showing a structure of a power generatingdevice according to an embodiment of the present disclosure.

It should be understood that the dimensions of the various parts shownin the accompanying drawings are not necessarily drawn according to theactual scale. In addition, the same or similar reference signs are usedto denote the same or similar components.

DETAILED DESCRIPTION

Various exemplary embodiments of the present disclosure will now bedescribed in detail in conjunction with the accompanying drawings. Thedescription of the exemplary embodiments is merely illustrative and isin no way intended as a limitation to the present disclosure, itsapplication or use. The present disclosure may be implemented in manydifferent forms, which are not limited to the embodiments describedherein. These embodiments are provided to make the present disclosurethorough and complete, and fully convey the scope of the presentdisclosure to those skilled in the art. It should be noticed that:relative arrangement of components and steps, material composition,numerical expressions, and numerical values set forth in theseembodiments, unless specifically stated otherwise, should be explainedas merely illustrative, and not as a limitation.

The use of the terms “first”, “second” and similar words in the presentdisclosure do not denote any order, quantity or importance, but aremerely used to distinguish between different parts. A word such as“comprise”, “include”, or the like means that the element before theword covers the element(s) listed after the word without excluding thepossibility of also covering other elements. The terms “up”, “down”,“left”, “right”, or the like are used only to represent a relativepositional relationship, and the relative positional relationship may bechanged correspondingly if the absolute position of the described objectchanges.

In the present disclosure, when it is described that a particular deviceis located between the first device and the second device, there may bean intermediate device between the particular device and the firstdevice or the second device, and alternatively, there may be nointermediate device. When it is described that a particular device isconnected to other devices, the particular device may be directlyconnected to said other devices without an intermediate device, andalternatively, may not be directly connected to said other devices butwith an intermediate device.

All the terms (comprising technical and scientific terms) used in thepresent disclosure have the same meanings as understood by those skilledin the art of the present disclosure unless otherwise defined. It shouldalso be understood that terms as defined in general dictionaries, unlessexplicitly defined herein, should be interpreted as having meanings thatare consistent with their meanings in the context of the relevant art,and not to be interpreted in an idealized or extremely formalized sense.

Techniques, methods, and apparatus known to those of ordinary skill inthe relevant art may not be discussed in detail, but where appropriate,these techniques, methods, and apparatuses should be considered as partof this specification.

The inventors of the present disclosure have found that in the relatedart, a thin film battery having a longitudinal structure is verticallydisposed on a substrate, which results in that a cathode currentcollector or an anode current collector of the thin film battery islocated on a top. In this way, when the thin film battery is connectedto other devices, there is height difference between the cathode currentcollector or the anode current collector and structural layers (forexample, a source layer, a drain layer, or a gate layer) of the otherdevices, which results in that a metal connecting line between thecathode current collector or the anode current collector and thestructural layers of the other devices is likely to break.

In view of this, the embodiments of the present disclosure provide asemiconductor device to reduce the possibility that the above-describedmetal connecting line breaks. Hereinafter, a semiconductor deviceaccording to some embodiments of the present disclosure will bedescribed in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic cross-sectional view showing a semiconductordevice according to an embodiment of the present disclosure. As shown inFIG. 1, the semiconductor device comprises a substrate 10 and a thinfilm battery on the substrate 10.

As shown in FIG. 1, the thin film battery comprises: at least one anodestructure 11 on the substrate 10 and at least one cathode structure 12on the substrate 10, and a solid electrolyte layer 13 spacing the atleast one anode structure 11 apart from the at least one cathodestructure 12. The solid electrolyte layer 13 is on a surface of thesubstrate 10. The solid electrolyte layer 13 covers the anode structure11 and the cathode structure 12.

In some embodiments, a material of the solid electrolyte layer maycomprise at least one of an organic polyelectrolyte material or aninorganic electrolyte material. For example, the organic polyelectrolytematerial may comprise polyvinyl alcohol+potassium fluoride (PVA+KF),polyethylene oxide+lithium hexafluorophosphate (PEO+LiPF₆), or the like.For example, the inorganic electrolyte material may comprise porousSiO₂, porous Al₂O₃, composite materials comprising CaCl₂) and porousSiO₂, composite materials comprising LiCl and porous SiO₂, SiO₂nanoparticles, Al₂O₃ nanoparticles, zeolite, phosphosilicate glass, orthe like.

As shown in FIG. 1, each anode structure 11 comprises: an anode currentcollector 111 on the surface of the substrate 10 and an anode layer 112on the surface of the substrate 10 and connected to a side surface ofthe anode current collector 111. For example, one anode layer 112 may beconnected to one side surface of the anode current collector 111, or theanode layer 112 may be connected to both side surfaces of the anodecurrent collector 111. For example, different anode current collectorsmay be electrically connected, and may be led out through a same wire.

As shown in FIG. 1, each cathode structure 12 comprises: a cathodecurrent collector 121 on the surface of the substrate 10 and a cathodelayer 122 on the surface of the substrate 10 and connected to a sidesurface of the cathode current collector. For example, one cathode layer122 may be connected to one side surface of the cathode currentcollector 121, or the cathode layer 122 may be connected to both sidesurfaces of the cathode current collector 121. For example, differentcathode current collectors may be electrically connected, and may be ledout through a same wire.

So far, a semiconductor device according to some embodiments of thepresent disclosure has been provided. In this semiconductor device, ananode current collector, an anode layer, a cathode current collector,and a cathode layer are provided on the surface of the substrate. Asolid electrolyte layer is also provided on the surface of thesubstrate, and the solid electrolyte layer spaces the anode structureapart from the cathode structure. Such structure of the thin filmbattery may be referred to as a transverse structure. That is, this thinfilm battery has a transverse structure. This may reduce the height ofthe cathode current collector, the anode current collector or the like.When the thin film battery is connected to structural layers of otherdevices (for example, thin film transistors), the height differencebetween the cathode current collector or the anode current collector ofthe thin film battery and the structural layers of the other devices maybe reduced. Therefore, it is possible to reduce the possibility that themetal connecting line between the cathode current collector or the anodecurrent collector and the structural layer of the other devices breaks.

FIG. 2 is a schematic cross-sectional view showing a semiconductordevice according to another embodiment of the present disclosure. Asshown in FIG. 2, the semiconductor device comprises a substrate 10 and athin film transistor on the substrate 10. The thin film transistor hasthe same or similar structure as the thin film transistor shown in FIG.1, and thus will not be described in detail here.

In some embodiments, as shown in FIG. 2, the semiconductor device mayfurther comprise at least one thin film transistor on the substrate 10.The at least one thin film transistor and the thin film battery arelocated on the same side surface of the substrate 10. It should be notedthat, although one thin film transistor is shown in FIG. 2, thoseskilled in the art may understand that two or more thin film transistorsmay be provided on the substrate.

In some embodiments, as shown in FIG. 2, each thin film transistorcomprises a first electrode (for example, a source) 201, a secondelectrode (for example, a drain) 202 and an active layer 21 on thesubstrate 10. The active layer 21 is a semiconductor layer. For example,a material of the active layer 21 may comprise at least one ofpolysilicon or amorphous silicon. The first electrode 201 and the secondelectrode 202 are respectively on both side surfaces of the active layer21. That is, the active layer 21 is between the first electrode 201 andthe second electrode 202. The first electrode 201 and the secondelectrode 202 each is connected to the active layer 21.

In some embodiments, as shown in FIG. 2, each thin film transistor mayfurther comprise a dielectric layer 22 on a side of the active layer 21facing away from the substrate 10. For example, the dielectric layer 22is on the first electrode 201, the second electrode 202, and the activelayer 21.

In some embodiments, as shown in FIG. 2, each thin film transistor mayfurther comprise a gate 23 on a side of the dielectric layer 22 facingaway from the active layer 21. The gate 23 is on the dielectric layer22.

So far, a semiconductor device according to other embodiments of thepresent disclosure has been provided. In the semiconductor device, athin film battery and at least one thin film transistor are integratedon the substrate, which improves the integration of the semiconductordevice. Since the thin film battery has a transverse structure, theheight difference between the thin film battery and the thin filmtransistor may be reduced. In this way, when the cathode currentcollector or the anode current collector of the thin film battery isconnected to the electrodes (for example, the source, the drain, or thegate) of the thin film transistor, the possibility of the metalconnecting line between them being broken may be reduced. Therefore,when the semiconductor device is applied to a flexible display devicesuch as a wearable device, the possibility of the flexible displaydevice being damaged may be reduced.

In some embodiments, as shown in FIG. 2, the semiconductor device mayfurther comprise a planarization layer 24 covering the thin film batteryand the thin film transistor. For example, a material of theplanarization layer 24 may comprise organic materials such as resin.

In some embodiments, the semiconductor device may further comprise anencapsulation layer or the like (not shown) on the planarization layer24.

In some embodiments, materials of the first electrode 201 and the secondelectrode 202 are the same as a material of the anode current collector111. In other embodiments, the materials of the first electrode 201 andthe second electrode 202 are the same as a material of the cathodecurrent collector 121. In this way, during the process of integratingthe thin film transistor and the thin film battery, it is possible tofacilitate the manufacture.

In some embodiments, a material of the gate 23 is the same as thematerial of the cathode current collector 121. In other embodiments, thematerial of the gate 23 is the same as the material of the anode currentcollector 111. This may reduce the types of materials used during amanufacturing process and also facilitate the manufacture.

In some embodiments, a material of the dielectric layer 22 may be thesame as a material of the solid electrolyte layer 13. When no voltage isapplied to the gate of the thin film transistor, the positive andnegative ions in the solid electrolyte as the dielectric layer arefreely distributed, and the entire dielectric layer is electricallyneutral. In this embodiment, by using a solid electrolyte material as adielectric layer, it may not only facilitate the manufacture, but alsoreduce the turn-on voltage (or driving voltage) of the thin filmtransistor.

The operation principles of the thin film transistor with the solidelectrolyte as the dielectric layer will be introduced in detail belowin conjunction with FIGS. 3A and 3B.

FIG. 3A is a schematic view showing that a thin film transistoraccording to an embodiment of the present disclosure generates anelectric-double-layer capacitance under the action of a positive bias.FIG. 3B is a schematic view showing that a thin film transistoraccording to an embodiment of the present disclosure generates anelectric-double-layer capacitance under the action of a negative bias.For example, the thin film transistors in FIGS. 3A and 3B are n-channeltransistors.

As shown in FIG. 3A, when a positive bias is applied to the gateelectrode 23, the positive and negative ions in the dielectric layer 22using a solid electrolyte material may directionally move under theaction of an electric field generated by the positive bias. Positiveions may be accumulated at the interface between the dielectric layer 22and the active layer 21, and induce a layer of mirror-image charges onthe surface of the active layer 21 that is electrically opposite to thepositive ions. This layer of mirror-image charges and the positive ionlayer may form a strong interface capacitance, thereby forming anelectric-double-layer capacitor. For n-channel transistors, the layer ofmirror-image charges are an accumulated electron layer. In this way, ann-type channel is formed in the active layer 21, so the thin filmtransistor is turned on.

In this device model, an electric-double-layer capacitor is formed atthe interface of the dielectric layer/active layer and anotherelectric-double-layer capacitor is formed at the interface of thegate/dielectric layer, that is, a total of two electric-double-layercapacitors are formed. The capacitance of the entire device may be seenas a series connection of these two electric-double-layer capacitors.Since the thickness of the electric-double-layer is very small (thethickness is a nanometer scale), the gate has a large unit capacitance,which may improve the coupling efficiency of the gate, and thus mayreduce the turn-on voltage of the thin film transistor.

As shown in FIG. 3B, when a negative bias is applied to the gateelectrode 23, the negative ions in the dielectric layer 22 may reach theinterface of the dielectric layer 22 and the active layer 21 under theaction of an electric field generated by the negative bias. Negativeions may be accumulated at the interface between the dielectric layer 22and the active layer 21, and induce a layer of mirror-image charges onthe surface of the active layer 21 that is electrically opposite to thenegative ions. Therefore, for n-channel transistors, the positivelycharged mirror-image charges may be accumulated at the channel of theactive layer 21, and the electrons in the channel are repelled anddepleted by negative ions. Since the thin film transistor is ann-channel transistor, the thin film transistor is turn off in the casewhere the electrons are depleted.

FIG. 4 is a flowchart showing a manufacturing method for a semiconductordevice according to an embodiment of the present disclosure. As shown inFIG. 4, the manufacturing method may comprise steps S402 to S404.

At step S402, at least one anode structure and at least one cathodestructure are formed on a substrate. Each anode structure comprises ananode current collector on a surface of the substrate and an anode layeron the surface of the substrate and connected to a side surface of theanode current collector. Each cathode structure comprises a cathodecurrent collector on the surface of the substrate and a cathode layer onthe surface of the substrate and connected to a side surface of thecathode current collector.

In some embodiments, the step S402 may comprise forming at least oneanode current collector and at least one cathode current collectorspaced apart from the at least one anode current collector on thesubstrate. Next, an anode material is filled between the at least oneanode current collector and the at least one cathode current collector.Next, the anode material is patterned to form the anode layer. The anodelayer is spaced apart from the cathode current collector. Next, acathode material is filled between the anode layer and the cathodecurrent collector. Next, the cathode material is patterned to form thecathode layer. The cathode layer is spaced apart from the anode layer.In this embodiment, after the anode current collector and the cathodecurrent collector are formed, the anode layer is formed first, and thenthe cathode layer is formed, thereby forming the anode structure and thecathode structure.

In other embodiments, the step S402 may comprise forming at least oneanode current collector and at least one cathode current collectorspaced apart from the at least one anode current collector on thesubstrate. Next, a cathode material is filled between the at least oneanode current collector and the at least one cathode current collector.Next, the cathode material is patterned to form the cathode layer. Thecathode layer is spaced apart from the anode current collector. Next, ananode material is filled between the cathode layer and the anode currentcollector. Next, the anode material is patterned to form the anodelayer. The anode layer is spaced apart from the cathode layer. In thisembodiment, after the anode current collector and the cathode currentcollector are formed, the cathode layer is formed first, and then theanode layer is formed, thereby forming the cathode structure and theanode structure.

In other embodiments, the step S402 may comprise forming at least oneanode current collector and at least one cathode current collectorspaced apart from the at least one anode current collector on thesubstrate. The step S402 may further comprise forming the anode layerand the cathode layer by a three-dimensional (3D) printing processrespectively. Next, the anode layer is connected to a side surface ofthe anode current collector, and the cathode layer is connected to aside surface of the cathode current collector. The cathode layer isspaced apart from the anode layer. In this embodiment, the anode currentcollector and the cathode current collector are formed, and the anodelayer and the cathode layer are formed by the three-dimensional printingprocess respectively. The anode layer is connected to the side surfaceof the anode current collector and the cathode layer is connected to theside surface of the cathode current collector, thereby forming the anodestructure and the cathode structure. The method is more simple and easyto implement.

At step S404, a solid electrolyte layer is formed on the substrate, theanode structure, and the cathode structure. The solid electrolyte layerspaces the anode structure apart from the cathode structure. The solidelectrolyte layer covers the anode structure and the cathode structure.

So far, a manufacturing method for a semiconductor device according tosome embodiments of the present disclosure is provided. In themanufacturing method, at least one anode structure and at least onecathode structure are formed on the substrate; and a solid electrolytelayer is formed on the substrate, the anode structure, and the cathodestructure. The solid electrolyte layer spaces the anode structure apartfrom the cathode structure. In this way, a thin film battery having atransverse structure is formed on the substrate.

In some embodiments, the manufacturing method may further compriseforming a first electrode and a second electrode spaced apart from thefirst electrode on the substrate during the forming of the anode currentcollector and the cathode current collector. The first electrode and thesecond electrode serve as two electrodes of a thin film transistor. Forexample, materials of the first electrode and the second electrode arethe same as a material of the anode current collector. For anotherexample, the materials of the first electrode and the second electrodeare the same as a material of the cathode current collector.

In some embodiments, the manufacturing method may further compriseforming an active layer between the first electrode and the secondelectrode on the substrate. The first electrode and the second electrodeeach is connected to the active layer. That is, the active layer isconnected to the first electrode and the second electrode.

In some embodiments, the manufacturing method may further compriseforming a dielectric layer on the active layer during the forming of thesolid electrolyte layer. For example, a material of the dielectric layeris the same as a material of the solid electrolyte layer.

In some embodiments, the manufacturing method may further compriseforming a gate on the dielectric layer after forming the solidelectrolyte layer. For example, a material of the gate is the same asthe material of the cathode current collector. For another example, thematerial of the gate is the same as the material of the anode currentcollector.

FIGS. 5 to 12 are schematic cross-sectional views showing structures atseveral stages during a manufacturing process of a semiconductor deviceaccording to some embodiments of the present disclosure. Themanufacturing process of the semiconductor device according to someembodiments of the present disclosure will be described in detail belowin conjunction with FIGS. 5 to 12 and FIG. 2.

First, as shown in FIG. 5, a substrate 10 is provided. For example, thesubstrate 10 may be a rigid substrate such as glass, or a flexiblesubstrate such as PI (Polyimide) or PDMS (polydimethylsiloxane).

Next, as shown in FIG. 5, at least one anode current collector 111, atleast one cathode current collector 121, a first electrode 201, and asecond electrode 202 spaced apart from each other are formed on thesubstrate 10, for example by processes such as deposition, photo,etching, and the like. For example, materials of the first electrode 201and the second electrode 202 are the same as a material of the anodecurrent collector 111. Of course, those skilled in the art mayunderstand that the materials of the first electrode 201 and the secondelectrode 202 may also be the same as a material of the cathode currentcollector 121.

Next, as shown in FIG. 6, an active layer 21 located between the firstelectrode 201 and the second electrode 202 is formed on the substrate10. The first electrode 201 and the second electrode 202 each isconnected to the active layer 21. For example, the active layer 21 maybe formed by processes such as plating, photo, and etching, or by an FMM(Fine Metal Mask) evaporation process. For example, the active layer 21may use a semiconductor material doped with an n-type dopant (forexample, phosphorus) in a case where an NMOS (N-channel Metal OxideSemiconductor) transistor needs to be formed; and the active layer 21may use a semiconductor material doped with a p-type dopant (forexample, boron) in a case where a PMOS (P-channel Metal OxideSemiconductor) transistor needs to be formed.

Next, as shown in FIG. 7, for example, an anode material 112 is filledbetween the anode current collector 111 and the cathode currentcollector 121 by an FMM evaporation process.

Next, as shown in FIG. 8, the anode material is patterned by processessuch as photo, etching, and the like to form an anode layer 112. Theanode layer 112 is spaced apart from the cathode current collector 121.This forms an anode structure 11. The anode structure 11 comprises theanode current collector 111 and the anode layer 112.

Next, as shown in FIG. 9, for example, a cathode material 122 is filledbetween the anode layer 112 and the cathode current collector 121 by anFMM evaporation process.

Next, as shown in FIG. 10, the cathode material is patterned to form acathode layer 122 by processes such as photo, etching, and the like. Thecathode layer 122 is spaced apart from the anode layer 112. This forms acathode structure 12. The cathode structure 12 comprises the cathodecurrent collector 121 and the cathode layer 122.

Next, as shown in FIG. 11, a solid electrolyte layer 13 is formed on thesubstrate 10, the anode structure 11 and the cathode structure 12, and adielectric layer 22 is formed on the first electrode 201, the secondelectrode 202 and the active layer 21. A material of the dielectriclayer 22 comprises a solid electrolyte material. The dielectric layer isspaced apart from the solid electrolyte layer 13. For example, a solidelectrolyte material may be formed on the structure shown in FIG. 10 byprocesses such as sputtering and the like, and the solid electrolytematerial is patterned by processes such as photo, etching, and the liketo form the solid electrolyte layer 13 and the dielectric layer 22 inFIG. 11.

Next, as shown in FIG. 12, a gate 23 is formed on the dielectric layer22 by processes such as deposition, etching, and the like.

Next, a planarization layer 24 is formed on the structure shown in FIG.12 by processes such as deposition and planarization, thereby formingthe structure shown in FIG. 2.

So far, a manufacturing method for a semiconductor device according tosome embodiments of the present disclosure is provided. In themanufacturing method, after the anode current collector and the cathodecurrent collector for the thin film battery, and the first electrode,the second electrode and the active layer for the thin film transistorare formed, the anode layer is first formed, and then the cathode layeris formed, thereby forming the anode structure and the cathodestructure, and then forming other structures of the thin film batteryand the thin film transistor. With the manufacturing method, the thinfilm battery and the thin film transistor are integrated on the samesubstrate.

In other embodiments, after the structure shown in FIG. 6 is formed, thecathode layer is first formed, and then the anode layer is formed toform the cathode structure and the anode structure respectively, therebyforming the structure shown in FIG. 10. Then, other structures of thethin film battery and the thin film transistor are formed. In this way,the semiconductor device shown in FIG. 2 can also be formed.

In other embodiments, the anode layer and the cathode layer may beformed respectively by a three-dimensional printing process. Then, theanode layer is disposed on a side surface of the anode current collectorin the structure shown in FIG. 6, and the cathode layer is disposed on aside surface of the cathode current collector in the structure shown inFIG. 6, thereby forming the structure shown in FIG. 10. Then, otherstructures of the thin film battery and the thin film transistor areformed. In this way, the semiconductor device shown in FIG. 2 can alsobe formed. This method is easier to implement.

In some embodiments, the semiconductor device shown in FIG. 2 may beapplied to the energy collection of the nano-generator to form a powergenerating device with a self-driven energy storage function.

FIG. 13 is a schematic view showing a structure of a power generatingdevice according to an embodiment of the present disclosure. The powergenerating device according to some embodiments of the presentdisclosure will be described in detail below in conjunction with FIG.13.

As shown in FIG. 13, the power generating device comprises anano-generator 500 and a semiconductor device 600. The nano-generator500 is electrically connected to the semiconductor device 600.

In some embodiments, as shown in FIG. 13, the semiconductor device 600comprises a thin film battery 630 and at least one thin film transistor.For example, the at least one thin film transistor may comprise a firstthin film transistor 610 and a second thin film transistor 620. Forexample, the first thin film transistor 610 is an NMOS transistor, andthe second thin film transistor 620 is a PMOS transistor. The first thinfilm transistor 610, the second thin film transistor 620 and the thinfilm battery 630 are integrated on the same substrate.

In some embodiments, the nano-generator may be a frictionnano-generator. For example, as shown in FIG. 13, the nano-generator 500may comprise a first electrode layer (or referred to as an upperelectrode) 501, a second electrode layer (or referred to as a lowerelectrode) 502, and a first material layer 511 and a second materiallayer 512 between the first electrode layer 501 and the second electrodelayer 502. The first material layer 511 is in contact with the firstelectrode layer 501, and the second material layer 512 is in contactwith the second electrode layer 502. The first material layer 511 andthe second material layer 512 have different electron boundcapabilities. For example, a material of the first material layer 511may comprise polytetrafluoroethylene or the like, and a material of thesecond material layer 512 may comprise nylon or the like.

In some embodiments, as shown in FIG. 13, a first electrode of the firstthin film transistor 610 is electrically connected to the anode currentcollector (not shown in FIG. 13) of the thin film battery. A secondelectrode and a gate of the first thin film transistor 610 each iselectrically connected to the first electrode layer 501 of thenano-generator 500. A first electrode of the second thin film transistor620 is electrically connected to the cathode current collector (notshown in FIG. 13) of the thin film battery 630. A second electrode and agate of the second thin film transistor 620 each is electricallyconnected to the second electrode layer 502 of the nano-generator.

In the above-described power generating device, the first and secondelectrode layers of the nano-generator are connected to the anodecurrent collector and the cathode current collector of the thin filmbattery through the thin film transistors as switches respectively.

When the nano-generator 500 generates flowing charges during a frictionprocess, positive charges flow to the anode current collector of thethin film battery 630 through the first thin film transistor (forexample, an NMOS transistor) 610 by the first electrode layer 501 of thenano-generator, and electrons flow to the cathode current collector ofthe thin film battery 630 through the second thin film transistor (forexample, a PMOS transistor) 620 by the second electrode layer 502 of thenano-generator, thereby implementing collecting charges.

When the nano-generator 500 generates reverse-flowing charges during thefriction process, electrons flow out of the first electrode layer 501 ofthe nano-generator, and positive charges flow out of the secondelectrode layer 502 of the nano-generator. Since the first thin filmtransistor 610 is an NMOS transistor, when the electrons reaches thegate of the first thin film transistor 610, the first thin filmtransistor is turned off, so that the electrons cannot reach the anodecurrent collector of the thin film battery 630. Since the second thinfilm transistor 620 is a PMOS transistor, when the positive chargesreach the gate of the second thin film transistor 620, the second thinfilm transistor is turned off, so that the positive charges cannot reachthe cathode current collector of the thin film battery 630. In this way,the reverse-flowing charges are obstructed. Therefore, theabove-described power generating device may achieve the self-drivenenergy storage function.

Hereto, various embodiments of the present disclosure have beendescribed in detail. Some details well known in the art are notdescribed to avoid obscuring the concept of the present disclosure.According to the above description, those skilled in the art would fullyknow how to implement the technical solutions disclosed herein.

Although some specific embodiments of the present disclosure have beendescribed in detail by way of examples, those skilled in the art shouldunderstand that the above examples are only for the purpose ofillustration and are not intended to limit the scope of the presentdisclosure. It should be understood by those skilled in the art thatmodifications to the above embodiments or equivalently substitution ofpart of the technical features may be made without departing from thescope and spirit of the present disclosure. The scope of the presentdisclosure is defined by the appended claims.

1. A semiconductor device, comprising: a substrate; and a thin filmbattery on the substrate, comprising: at least one anode structure onthe substrate, each of which comprises an anode current collector on asurface of the substrate, and an anode layer on the surface of thesubstrate and connected to a side surface of the anode currentcollector; at least one cathode structure on the substrate, each ofwhich comprises a cathode current collector on the surface of thesubstrate, and a cathode layer on the surface of the substrate andconnected to a side surface of the cathode current collector; and asolid electrolyte layer spacing the at least one anode structure apartfrom the at least one cathode structure.
 2. The semiconductor deviceaccording to claim 1, further comprising at least one thin filmtransistor on the substrate, each of which comprises: a first electrodeon the substrate, a second electrode on the substrate, an active layeron the substrate, wherein the active layer is between the firstelectrode and the second electrode and connected to the first electrodeand the second electrode; a dielectric layer on a side of the activelayer facing away from the substrate; and a gate on a side of thedielectric layer facing away from the active layer.
 3. The semiconductordevice according to claim 2, wherein: materials of the first electrodeand the second electrode are the same as a material of the anode currentcollector; or the materials of the first electrode and the secondelectrode are the same as a material of the cathode current collector.4. The semiconductor device according to claim 2, wherein a material ofthe dielectric layer is the same as a material of the solid electrolytelayer.
 5. The semiconductor device according to claim 2, wherein amaterial of the gate is the same as a material of the cathode currentcollector or a material of the anode current collector.
 6. A powergenerating device, comprising: the semiconductor device according toclaim 2; and a nano-generator electrically connected to thesemiconductor device.
 7. The power generating device according to claim6, wherein: the nano-generator comprises a first electrode layer, asecond electrode layer, and a first material layer and a second materiallayer between the first electrode layer and the second electrode layer,wherein the first material layer is in contact with the first electrodelayer, and the second material layer is in contact with the secondelectrode layer; and the at least one thin film transistor comprises: afirst thin film transistor, of which a first electrode is electricallyconnected to the anode current collector of the thin film battery, asecond electrode and a gate each is electrically connected to the firstelectrode layer of the nano-generator, and a second thin filmtransistor, of which a first electrode is electrically connected to thecathode current collector of the thin film battery, and a secondelectrode and a gate each is electrically connected to the secondelectrode layer of the nano-generator.
 8. The power generating deviceaccording to claim 7, wherein the first thin film transistor is an NMOStransistor, and the second thin film transistor is a PMOS transistor. 9.A manufacturing method for a semiconductor device, comprising: formingat least one anode structure and at least one cathode structure on asubstrate, wherein each of the at least one anode structure comprises ananode current collector on a surface of the substrate and an anode layeron the surface of the substrate and connected to a side surface of theanode current collector, and each of the at least one cathode structurecomprises a cathode current collector on the surface of the substrateand a cathode layer on the surface of the substrate and connected to aside surface of the cathode current collector; and forming a solidelectrolyte layer on the substrate, the at least one anode structure andthe at least one cathode structure, wherein the solid electrolyte layerspaces the at least one anode structure apart from the at least onecathode structure.
 10. The manufacturing method according to claim 9,wherein the forming of the at least one anode structure and the at leastone cathode structure on the substrate comprises: forming at least oneanode current collector and at least one cathode current collectorspaced apart from the at least one anode current collector on thesubstrate; filling an anode material between the at least one anodecurrent collector and the at least one cathode current collector;patterning the anode material to form the anode layer, wherein the anodelayer is spaced apart from the at least one cathode current collector;filling a cathode material between the anode layer and the at least onecathode current collector; and patterning the cathode material to formthe cathode layer, wherein the cathode layer is spaced apart from theanode layer.
 11. The manufacturing method according to claim 9, whereinthe forming of the at least one anode structure and the at least onecathode structure on the substrate comprises: forming at least one anodecurrent collector and at least one cathode current collector spacedapart from the at least one anode current collector on the substrate;filling a cathode material between the at least one anode currentcollector and the at least one cathode current collector; patterning thecathode material to form the cathode layer, wherein the cathode layer isspaced apart from the at least one anode current collector; filling ananode material between the cathode layer and the at least one anodecurrent collector; and patterning the anode material to form the anodelayer, wherein the anode layer is spaced apart from the cathode layer.12. The manufacturing method according to claim 9, wherein the formingof the at least one anode structure and the at least one cathodestructure on the substrate comprises: forming at least one anode currentcollector and at least one cathode current collector spaced apart fromthe at least one anode current collector on the substrate; forming theanode layer and the cathode layer by a three-dimensional printingprocess respectively; and connecting the anode layer to a side surfaceof the at least one anode current collector, and connecting the cathodelayer to a side surface of the at least one cathode current collector,wherein the cathode layer is spaced apart from the anode layer.
 13. Themanufacturing method according to claim 10, further comprising: forminga first electrode and a second electrode spaced apart from the firstelectrode on the substrate during the forming of the at least one anodecurrent collector and the at least one cathode current collector;forming an active layer between the first electrode and the secondelectrode on the substrate, wherein the active layer is connected to thefirst electrode and the second electrode; forming dielectric layer onthe active layer during the forming of the solid electrolyte layer; andforming a gate on the dielectric layer after forming the solidelectrolyte layer.
 14. The manufacturing method according to claim 13,wherein: materials of the first electrode and the second electrode arethe same as a material of the anode current collector, or the materialsof the first electrode and the second electrode are the same as amaterial of the cathode current collector.
 15. The manufacturing methodaccording to claim 13, wherein a material of the dielectric layer is thesame as a material of the solid electrolyte layer.
 16. The manufacturingmethod according to claim 13, wherein: a material of the gate is thesame as a material of the cathode current collector, or the material ofthe gate is the same as a material of the anode current collector. 17.The manufacturing method according to claim 11, further comprising:forming a first electrode and a second electrode spaced apart from thefirst electrode on the substrate during the forming of the at least oneanode current collector and the at least one cathode current collector;forming an active layer between the first electrode and the secondelectrode on the substrate, wherein the active layer is connected to thefirst electrode and the second electrode; forming a dielectric layer onthe active layer during the forming of the solid electrolyte layer; andforming a gate on the dielectric layer after forming the solidelectrolyte layer.